CVD/PE CVD

PECVD (CCP-CVD, ICP-CVD and MWCVD), HWCVD, ECRCVD, HTCVD, MOCVD and ALD/PEALD

• Single or multi-chamber (cluster)
• Up to 12 gas lines
• Solid, liquid or gaseous precursors
• Custom loudspeakers
• Auto or manual loading, single or from 5 or 25-wafer cassettes
• Custom-made Chuck
• Airlock possible
• Substrate temperature possible from +20° to +1000°C
• Automatic pumping
• Multi-layer possibilities
• Possible doping
• Thickness measurement system (laser interferometer or quartz balance)
• Wafer up to 300 mm (more on request)