The ONTOS Clean is a semi-automated surface preparation system using patented atmospheric plasma. This unique system allows the use of oxidizing or reducing chemistries without modification. ONTOS Clean performs cleaning, eliminates organic contamination, activates surfaces and eliminates oxidation. An innovative process applies gas passivation which delays the re-oxidation of metal surfaces.
The + of the ONTOS CLEAN :
Patented atmospheric plasma technology : Unlike traditional systems requiring vacuum chambers, the ONTOS Clean uses atmospheric plasma, simplifying the process and reducing costs.
Chemical versatility : Use of helium or argon as carrier gas with the possibility of introducing oxygen (cleaning and activation), hydrogen (oxide removal) or nitrogen (cleaning and passivation).
Non-toxic and dry process : ONTOS Clean provides fast, non-toxic and dry surface preparation, ideal for sensitive environments.
Innovative gas passivation : This unique process delays the re-oxidation of metal surfaces, thus extending the life of the treated components.
The benefits :
Increased efficiency : The system allows for rapid cleaning and activation of surfaces, improving throughput and productivity.
Security and simplicity : The process is safe for devices and personnel, with no arc discharges, ions, bombardment, re-deposition or flaking particles.
Compatibility with automation : The ONTOS Clean is designed to easily integrate into automated production lines, providing a flexible and scalable solution.
Cost reduction : By eliminating the need for vacuum chambers and using non-toxic gases, the ONTOS Clean reduces operational and maintenance costs.
Applications :
ONTOS Clean is designed to provide fast, non-toxic and dry surface preparation.
Here are its main technical characteristics :
Atmospheric plasma system :
Unique design with standard treatment areas of 25mm, 40mm or 105mm wide.
13.56 MHz RF generator : Wide range automatic adaptation network, system security monitoring and computer control of direct and reflected power.
Digital Mass Flow Controllers : Precise control of gas flow to the plasma source.
Secure ESD enclosure : Interlocked with process gas evacuation (no scrubber required).
Semi-automatic system : Touch screen computer controlled with user configurable recipe libraries.
Substrate positioning : Computer-controlled X-Y-Z stage with standard vacuum chuck for wafers from 2 to 300 mm and substrate thicknesses up to 20 mm (30 mm without lifting pins).
Safety and efficiency : Simple vacuum chamber-less process, fast, ultra-clean, safe for devices and personnel, without arc discharges, ions, bombardment, redeposition or flaking particles. Meets OSHA and EPA standards, CE12 marked.
ONTOS Clean offers several options and benefits to meet specific customer needs :
Chemistry Options : Use of helium or argon as carrier gas with the possibility of introducing oxygen (cleaning and activation), hydrogen (oxide removal) or nitrogen (cleaning and passivation).
Configurations de plasma : Standard 25mm, 40mm and 105mm plasma head. Optional oxygen plasma configuration available upon request.
Easy integration : Compatible with automation, compact configuration, and possibility of integration into customer equipment with a dedicated software module.
The ONTOS Clean is ideal for the semiconductor, automotive, aerospace, medical and optical industries, providing an advanced and reliable surface treatment solution
Pre/post treatment analysis: In-situ ellipsometry, in-situ goniometry, heated chuck, nitrogen environment, oxygen cleaning