distributeur français d’équipements et consommables pour l’industrie du Semiconducteur.
distributeur français d’équipements et consommables pour l’industrie du Semiconducteur.
CVD (Chemical Vapor Deposition) is a process used to produce high-performance, high-purity solid materials. The substrate is exposed to one or more gas-phase precursors, which react and/or decompose on the substrate surface to generate the desired deposit. Frequently, reaction by-products, themselves in the gas phase, are produced and evacuated by the gas flow that continuously passes through the reaction chamber.
CVD is widely used to deposit materials in various forms: monocrystalline, polycrystalline, amorphous, epitaxial. These materials include silicon, silica, silicon germanium, silicon carbides, diamond carbon, fibers, nanofibers, filaments, carbon nanotubes, tungsten, high electrical permittivity materials, etc.
Thermal chemical vapor deposition (CVD) uses high temperatures to deposit thin films by reacting gases with a substrate, ideal for materials like silicon and graphene.
Metal-organic CVD (MOCVD) creates high-purity films using metal-organic gases under moderate pressure.
Plasma-enhanced CVD (PECVD) uses plasma to deposit films at lower temperatures, while inductively coupled plasma CVD (ICP-CVD) allows deposition at even lower temperatures, suitable for sensitive substrates such as polymers.
Our partner Elettrorava has been designing and manufacturing thin film deposition machines in Italy for over 35 years.
The equipment offered is flexible for R&D and production, and for multiple applications: optics, semiconductors, medical, photovoltaics, precision watchmaking, etc.
LPCVD, MOCVD, PECVD, ICPCVD
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• Single or multi-chamber (cluster)
• Up to 12 gas lines
• Solid, liquid or gaseous precursors
• Custom-made enclosures
• Simple automatic or manual loading or from a 5 or 25 wafer cassette
• Custom-made chuck
• Airlock possible
• Automatic pumping
• Multi-layer possibilities
• Doping possible
• Thickness measuring system (laser interferometer or quartz balance)
• Wafer up to 300 mm (more on request
• Possible substrate temperature from +20° to +1000°C
