Magnetron sputtering is a versatile technique for creating thin films by sputtering atoms of a target material using an argon plasma. It can deposit a wide range of materials, including metals and semiconductors. The ejected material forms a vapor which condenses into a thin film on the substrate.
Ion beam sputtering (IBS) uses a focused ion beam to sputter the target material onto a substrate. The ion beam, generated in a low pressure chamber, ensures precise and controlled deposition, improving the density and quality of the film. Additional ion beams can further refine the film properties.
Ion beam-assisted deposition (IBAD) combines material deposition with simultaneous ion bombardment, improving the density and surface properties of the film. This technique is ideal for temperature-sensitive materials and allows control of the texture and roughness of the film.
Our partner Elettrorava has been designing and manufacturing thin film deposition machines in Italy for over 35 years.
MAGNETRON SPUTTERING (MS) - ION BEAM SPUTTERING (IBS) - ION BEAM ASSISTED DEPOSITION (IBAD)
- Base pressure HV : < 1x10-6 mbar
- Base pressure UHV : < 1x10-9 mbar
- Pumping system :
- MS : Turbomolecular, Cryo, TSP
- IBS and IBAD : Turbomolecular, Cryo, TSP or combined Cryo/Turbo for ultimate vacuum and processes.
- Sources :
- MS : Mounted in single, coplanar, confocal or vertical configuration (single or multiple) DC, pulsed DC, RF, HIPIMS
- IBS: Single or double (with or without gate) DC, pulsed DC, RF
- IBAD: With or without gate, DC, pulsed DC, RF
- Additional sources :
- MS: Evaporation, electron beam, ion beam for etching and deposition
- IBS: Evaporation, electron beam, magnetron sputtering
- IBAD: Evaporation, electron beam, magnetron sputtering, ion beam
- Deposition area: Up to 20”
- Substrate handling :
- Rotation: up to 50 rpm, optional planetary configuration
- Tilt: ±45°
- Offset (Z or X): up to 100 mm
- Process temperature: Up to 800 °C
- Reactive process: One or more reactive gases (O2, H2, N2, etc.)
- Thickness uniformity :
- MS: Up to 2%
- IBS and IBAD : Up to 1%
- Process control : Programmable quartz thickness controller and/or in situ optical monitor
- Substrate load : Manual in the main chamber or by Load Lock with manual or automatic manipulator
- Load lock : Single or multiple load locks, can be motorized with multiple substrate holders
- Multi wafer loading : Optional multi-wafer loading system for up to 25 wafers
- Deposited materials : Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials
- Custom speakers (sputter-up or sputter-down)
- Plasma treatment, ion beam (stripping or assistance), oxidation or recrystallization possible
- Plasma treatment or ion stripping before deposition possible
- Simple automatic or manual loading or from a 5 or 25 wafer cassette
- Spray up or down (sputter up/down)
- Cathode in planar or confocal configuration
- Reactive spraying
- Custom substrate support (flange support or electrostatic support)
- Static, dynamic, planetary, doubly planetary (satellite) and oscillating deposits
- Substrate RF bias before and during deposition
- Possibility of co-spraying
- Thickness measurement system (laser interferometer or quartz balance)
- Wafer up to 300 mm (more on request)
