AT650 thermal or plasma

Tabletop, substrate up to 6'' (ANRIC)

TECHNICAL SHEET

Browse the products in the range

Space-saving benchtop thermal ALD (38.1 cm; 15″ diameter)
Scalable with plasma option, retrofittable on site.
For substrates 6″ in diameter or less, with optional customizable chucks.
Hot-walled aluminum chamber with sample holder heated from 40 to 400°C.
3 organometallic precursors can be heated to 185°C and one additional precursor under standard conditions (expandable to 4, all heated to 185°C)
Up to 4 oxidizer/reductant sources each with ultra-fast MFCs (2 standard)
High temperature compatible, fast pulse ALD valves with ultra-fast MFC for integrated inert gas purge
High exposure available in static processing mode
TA650P: benchtop plasma ALD system
Remote, high-efficiency 300-watt hollow cathode source
Characteristics: low oxygen contamination (in nitrides, etc.), high electron density, low plasma damage.

CHAMBER

Substrate temperatures from RT to 400°C ± 1°C; precursor temperatures from RT to 185°C ± 2°C (with heating jacket)
Space-saving footprint (15″ by 15″), benchtop installation and full cleanroom compatibility.
Simple system maintenance and low consumable cost.
Streamlined chamber design and low chamber volume
Capability for fast cycling and high exposure, high aspect ratio processing.
Complete HW and SW interlocks for safe operation, even in multi-user environment.

SOFTWARE

PLC system with human-machine interface (HMI) with 10-inch touchscreen
Advanced controls adapted to deposition of standard ALD cycles as well as, for example, nanolaminates, doped thin films and ternary thin films.
Recipe database for tested, high-quality processes
Custom recipe entry screen
Real-time process status display
Individually programmable heated source temperatures
Integrated pulse sequences for ternary compounds and nanolaminates
Fast operation with simple prompts to guide the user
Sub-cycle and overall cycle entry

OPTIONS

Plasma enhancement
Custom chuck/flat
ATOzone - ozone generator (necessary for certain films: Pt, Ir, SiO2, MoO2, high quality Al2O3 below 60°C, high quality HfO2)
QCM (Quartz crystal microbalance)
Additional counterreagent lines (MFC controlled) - up to 2 additional
4th heated precursor optional (185°C)
External control - PC/software link (allows remote programming and operation)
Higher pressure regime than standard regime
Custom systems

UTILITIES

N2 purge gas should be >99.9995% with a shut-off valve (regulated to 10 - 30 psi, metal sealed).
The input line is a ¼ female VCR compression fitting
Connect nitrogen purge gas (UHP) to > 99.9995% via 1/4″ metal line to 1/4″ compression fitting on the rear.
Connect clean dry air (90-110 psi) via 1/4″ polyethylene tubing or metal tubing to the other 1/4″ compression fitting marked CDA (Clean Dry Air).
Min 19.5cfm lubricated pump (**PTFE vacuum fluid (like Fomblin) required)
NW40 connection (1.5″) and also exhaust line (with flow rate > 5cfm)
Beyond one meter, use an NW50 exhaust pipe.
The precursors are fixed using female VCR elbows (always use new joints).
Elbow: 1/4″ joint first (with gloves)

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