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AT650 thermal or plasma

Tabletop, substrate up to 6’’ (ANRIC)

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  • Space-saving benchtop thermal ALD (38.1 cm; 15″ diameter)
  • Scalable with plasma option, retrofittable on site.
  • For substrates 6″ in diameter or less, with optional customizable chucks.
  • Hot-walled aluminum chamber with sample holder heated from 40 to 400°C.
  • 3 organometallic precursors can be heated to 185°C and one additional precursor under standard conditions (expandable to 4, all heated to 185°C)
  • Up to 4 oxidizer/reductant sources each with ultra-fast MFCs (2 standard)
  • High temperature compatible, fast pulse ALD valves with ultra-fast MFC for integrated inert gas purge
  • High exposure available in static processing mode
  • TA650P: benchtop plasma ALD system
  • Remote, high-efficiency 300-watt hollow cathode source
  • Characteristics: low oxygen contamination (in nitrides, etc.), high electron density, low plasma damage.

BEDROOM

  • RT substrate temperatures at 400°C ± 1°C; RT precursor temperatures at 185°C ± 2°C (with heating jacket)
  • Small footprint (15″ by 15″), benchtop installation and full compatibility with clean rooms.
  • Simple system maintenance and low cost of consumables.
  • Streamlined chamber design and low chamber volume
  • Possibility of rapid cycles and processing at high exposure and high relief.
  • Comprehensive HW and SW interlocks for safe operation, even in a multi-user environment.

SOFTWARE

  • Human-machine interface (HMI) PLC system with 10-inch touch screen
  • Advanced controls suitable for deposition of standard ALD cycles as well as, for example, nanolaminates, doped thin films and ternary thin films.
  • Recipe database for tested, high-quality processes
  • Customized recipe entry screen
  • Real-time display of process status
  • Individually programmable heating source temperatures
  • Integrated pulse sequences for ternary compounds and nano-laminates
  • Quick operation with simple questions to get the user started
  • Entering subcycles and overall cycles

OPTIONS

  • Plasma enhancement
  • Custom chuck/flat
  • ATOzone - ozone generator (necessary for certain films: Pt, Ir, SiO2, MoO2, high quality Al2O3 below 60°C, high quality HfO2)
  • QCM (Quartz crystal microbalance)
  • Additional counterreagent lines (MFC controlled) - up to 2 additional
  • 4th heated precursor optional (185°C)
  • External control - PC/software link (allows remote programming and operation)
  • Higher pressure regime than standard regime
  • Custom systems

UTILITIES

  • N2 purge gas should be >99.9995% with a shut-off valve (regulated to 10 - 30 psi, metal sealed).
  • The input line is a ¼ female VCR compression fitting
  • Connect nitrogen purge gas (UHP) to > 99.9995% via 1/4″ metal line to 1/4″ compression fitting on the rear.
  • Connect clean dry air (90-110 psi) via 1/4″ polyethylene tubing or metal tubing to the other 1/4″ compression fitting marked CDA (Clean Dry Air).
  • Min 19.5cfm lubricated pump (**PTFE vacuum fluid (like Fomblin) required)
  • NW40 connection (1.5″) and also exhaust line (with flow rate > 5cfm)
  • Beyond one meter, use an NW50 exhaust pipe.
  • The precursors are fixed using female VCR elbows (always use new joints).
  • Elbow: 1/4″ joint first (with gloves)

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