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- Space-saving benchtop thermal ALD (38.1 cm; 15″ diameter)
- Scalable with plasma option, retrofittable on site.
- For substrates 6″ in diameter or less, with optional customizable chucks.
- Hot-walled aluminum chamber with sample holder heated from 40 to 400°C.
- 3 organometallic precursors can be heated to 185°C and one additional precursor under standard conditions (expandable to 4, all heated to 185°C)
- Up to 4 oxidizer/reductant sources each with ultra-fast MFCs (2 standard)
- High temperature compatible, fast pulse ALD valves with ultra-fast MFC for integrated inert gas purge
- High exposure available in static processing mode
- TA650P: benchtop plasma ALD system
- Remote, high-efficiency 300-watt hollow cathode source
- Characteristics: low oxygen contamination (in nitrides, etc.), high electron density, low plasma damage.
BEDROOM
- RT substrate temperatures at 400°C ± 1°C; RT precursor temperatures at 185°C ± 2°C (with heating jacket)
- Small footprint (15″ by 15″), benchtop installation and full compatibility with clean rooms.
- Simple system maintenance and low cost of consumables.
- Streamlined chamber design and low chamber volume
- Possibility of rapid cycles and processing at high exposure and high relief.
- Comprehensive HW and SW interlocks for safe operation, even in a multi-user environment.
SOFTWARE
- Human-machine interface (HMI) PLC system with 10-inch touch screen
- Advanced controls suitable for deposition of standard ALD cycles as well as, for example, nanolaminates, doped thin films and ternary thin films.
- Recipe database for tested, high-quality processes
- Customized recipe entry screen
- Real-time display of process status
- Individually programmable heating source temperatures
- Integrated pulse sequences for ternary compounds and nano-laminates
- Quick operation with simple questions to get the user started
- Entering subcycles and overall cycles
OPTIONS
- Plasma enhancement
- Custom chuck/flat
- ATOzone - ozone generator (necessary for certain films: Pt, Ir, SiO2, MoO2, high quality Al2O3 below 60°C, high quality HfO2)
- QCM (Quartz crystal microbalance)
- Additional counterreagent lines (MFC controlled) - up to 2 additional
- 4th heated precursor optional (185°C)
- External control - PC/software link (allows remote programming and operation)
- Higher pressure regime than standard regime
- Custom systems
UTILITIES
- N2 purge gas should be >99.9995% with a shut-off valve (regulated to 10 - 30 psi, metal sealed).
- The input line is a ¼ female VCR compression fitting
- Connect nitrogen purge gas (UHP) to > 99.9995% via 1/4″ metal line to 1/4″ compression fitting on the rear.
- Connect clean dry air (90-110 psi) via 1/4″ polyethylene tubing or metal tubing to the other 1/4″ compression fitting marked CDA (Clean Dry Air).
- Min 19.5cfm lubricated pump (**PTFE vacuum fluid (like Fomblin) required)
- NW40 connection (1.5″) and also exhaust line (with flow rate > 5cfm)
- Beyond one meter, use an NW50 exhaust pipe.
- The precursors are fixed using female VCR elbows (always use new joints).
- Elbow: 1/4″ joint first (with gloves)
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