ION ETCHING/MACHINING

IBE, RIBE and CAIBE

• Custom loudspeakers
• ICP source (choice of 10 cm to 30 cm ion beam)
• Current density from 100 eV to 1500 eV)
• Auto or manual loading, single or from 5 or 25-wafer cassettes
• Custom-made substrate holders
• Static, dynamic, planetary or oscillating deposits (0° to 75°)
• Substrate temperature possible from +5° to +600°C
• Up to 8 gas lines available
• Airlock possible
• Possibility of anisotropic etching and control of etching angle
• Dual-beam capability (etching and deposition/spraying)
• Automatic pumping
• End-of-engraving detection system (e.g. SIMS)
• Wafer up to 300 mm (more on request)