Furnaces for rapid annealing, oxidation, nitriding, sulfurization, carburization, dopant diffusion, crystallization, densification and wafer bonding processes.
- Automatic or on-demand loading, simple manual or from 5 or 25 wafer cassette
- Front or top opening (safety lock to prevent opening during the process)
- Radiant heating (infrared lamps at the top and bottom) up to 1200°C
- Temperature uniformity < 1°C
- Ultra-controlled process in perfectly repeatable conditions for an identical result for each process
- Up to 4 gas lines
- Safety enclosure around the furnace for hydrogen process
- Pressure from 3.10-3 hPa to 10-6 hPa
- Temperature rise rate: 100°C/s max
- Temperature reduction speed: 200°C/min max
- Ultra compact system
- Programming touch screen
- Wafer up to 300 mm
