PLASMA ENGRAVING

ICP/RIE/ICP-RIE/DRIE

• Up to 12 gas lines
• Solid, liquid or gaseous precursors
• Custom loudspeakers
• Auto or manual loading, single or from 5 or 25-wafer cassettes
• Custom-made Chuck
• Airlock possible
• Substrate temperature possible from +20° to +1000°C
• Automatic pumping
• Selective engraving possible
• High aspect ratio engraving possible
• End-of-engraving detection system
• Wafer up to 300 mm (more on request)