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PLASMA ENGRAVING

PLASMA ETCHING
FICHE TECHNIQUE
Parcourir les produits de la gamme
  • Reactive ion etching (RIE) is a plasma-based technique for precisely removing material from a substrate. Activated gaseous species in the plasma are accelerated by an electrical bias to etch the surface. A mask is often used for selective patterning of the substrate.
  • Inductively coupled reactive ion etching (ICPRIE) is ideal for deep etching of silicon, essential for MEMS applications. It combines an inductively coupled plasma source with direct application of the plasma to the substrate, allowing for greater precision and selectivity.
  • Ion beam etching (IBE) uses a focused ion beam, typically argon, to remove material with high precision. The energy and beam angle can be adjusted to achieve uniform engraving on various materials.

Our partner Elettrorava has been designing and manufacturing thin film deposition machines in Italy for over 35 years.

REACTIVE ION ETCHING (RIE) - INDUCTIVE COUPLED PLASMA RIE (ICPRIE) - ION BEAM ETCHING (IBE)

Base pressure HV: < 1x10-6 mbar

Base pressure UHV:

  • RIE and ICPRIE : < 1x10-8 mbar
  • IBE: < 1x10-9 mbar

Pumping system:

  • RIE and ICPRIE:Dry primary pump, High Vacuum Turbomolecular Pump
  • IBE:Turbomolecular, Cryo, TSP

Sources:

  • RIE: DC, pulsed DC, RF
  • ICPRIE: Inductively coupled plasma source
  • IBE: Ion beam source (with or without grid)

Additional sources :

    • < li>

RIE

    • : N/A

    • ICPRIE : Substrate Plasma Source
    • IBE : N/A

      • </ul >

Deposition area :Up to 12”

Substrate handling :

      • RIE and ICPRIE: N/A
      • IBE: Rotation: up to 50 rpm, optional planetary configuration, Tilt: ±45°. Offset (Z or X): up to 100 mm

Process temperature :

      • RIE, ICPRIE : Temperature range -40°C and 400°C
      • IBE:  Temperature range: from -35 °C to 300 °C

Reactive process :

    • < p>One or more reactive gases:

      • RIE and ICPRIE: 02, H2, N2, C2H4, CF4, SF6, etc.
      • IBE : O2 , H2 , N2 , etc.

Etching uniformity :

      • RIE and ICPRIE: up to 10%
      • IBE: up to 5%

Process control: In situ optical monitor or emission spectroscopy optical

Substrate load : Manual in the main chamber or by Load Lock with manual or automatic manipulator

Load lock : Locks single or multiple loading, manual or motorized with multiple substrate holders

Multi wafer loading: Optional multi-wafer cassette system for up to 25 wafers

Etched materials :

      • RIE and ICPRIE : metals, oxides, nitrides, carbides, semiconductors, carbon-based materials, organics
      • IBE: metals, oxides, nitrides, carbides, semiconductors, carbon-based materials

• Custom-made enclosures
• ICP source (10 cm to 30 cm ion beam of your choice)
• Current density from 100 eV to 1500 eV)
• Simple automatic or manual loading or from a 5 or 25 wafer cassette
• Custom-made substrate holder
• Static, dynamic, planetary or oscillating deposition (0° to 75°)
• Possible substrate temperature from +5° to +600°C
• Up to 8 gas lines available
• Possible airlock
• Possibility of anisotropic etching and control of the etching angle
• Possibility of double-beam (etching and deposition/sputtering)
• Automatic pumping
• End of etching detection system (e.g. : SIMS)
• Wafer up to 300 mm (more on request)

Connectez-vous à notre expert
Laurent BEDDELEM
laurent.beddelem@microtest-semi.com
06.34.10.75.23

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