For rapid annealing, oxidation, nitriding, sulfurizing, carburizing, dopant diffusion, crystallization, densification and wafer bonding processes.
- Auto loading or manual loading on request, single or from 5 or 25-wafer cassettes
- Front or top opening (safety lock to prevent opening during process)
- Radiant heating (top and bottom infrared lamps) up to 1200°C
- Temperature uniformity < 1°C
- Ultra-controlled process under perfectly repeatable conditions for identical results in every process
- Up to 4 gas lines
- Safety enclosure around furnace for hydrogen process
- Pressure from 3.10-3 hPa to 10-6 hPa
- Temperature rise rate: 100 °C/s max.
- Temperature descent rate: 200 °C/min max.
- Ultra-compact system
- Touch screen programming
- Wafer up to 300 mm
