Diode or Magnetron Sputtering (RF, DC or Pulsed DC), Ion Beam Sputtering or Ion Beam Assisted Sputtering.
- Custom enclosures (sputter-up or sputter down)
- Plasma treatment, ion beam (stripping or assistance), oxidation or recrystallization possible
- Plasma treatment or pre-deposition ion pickling possible
- Simple automatic or manual loading or from cassette 5 or 25 wafers
- Spray up or down (sputter up/down)
- Cathode in planar or confocal configuration
- Reactive spraying
- Custom-made substrate holder (support by flange or electrostatic support)
- Static, dynamic, planetary, double planetary (satellite) and oscillating deposits
- Substrate RF bias before and during deposition
- Substrate temperature possible from -60° to +1000°C
- Sas possible
- Automatic pumping
- Possibility of co-spray
- Possible doping
- Multi-layer possibility with multi-cathodes
- Thickness measurement system (laser interferometer or quartz balance)
- Wafer up to 300 mm (more on request)