AT410/610/810
Tabletop, 4’’, 6’’, 8’’ substrate (ANRIC)
Browse the products in the range
Presentation
- Customizable circular chuck for smaller sizes or other shapes (11mm high).
-AT410: 4’’ chuck -AT610: 6’’ chuck -AT810: 8’’ chuck
- Space-saving benchtop system (< 0.15m3 | 2.5 sq ft for AT410)
- Semiconductor grade metal sealed lines and fast pulsing ALD valves compatible with high temperatures.
- High-speed MFC for integrated inert gas purge.
- 3 organometallic precursors and 2 (up to 3) counter-reagents. Precursors can be heated up to 150°C.
- Heated lines throughout the process (from precursor to chamber).
- High exposure (for trenches and porous substrates) and static processing mode.
- All-aluminum chamber (semiconductor grade) - range up to 320°C (AT410), 310°C (AT610), 300°C (AT810)
- 7″ touchscreen PLC controller (no PC required)
- Lifetime software updates included
- Simple system maintenance and lowest consumption of utilities and precursors on the market
Technical Specs
CHAMBER
- Chamber temperatures from RT to 320°C ± 1°C (300°C for AT610 and AT810);
- Precursor temperatures from RT to 180°C ± 2°C with heating jacket (150°C for AT610 and AT810)
- Lowest footprint on the market, benchtop installation and cleanroom compatible
- Simple system maintenance and lowest precursor and utility consumption on the market
- Streamlined chamber design and low chamber volume
- Fast cycling capability (up to 1.2nm/min Al2O3) and high exposure, high aspect ratio processing available
- Full HW and SW interlocks for safe operation, even in multi-user environments.
SOFTWARE
- Human-Machine Interface (HMI) PLC system with 7-inch touchscreen
- Advanced controls suitable for standard ALD cycle deposition
- Recipe database for tested, high-quality processes
- Custom recipe entry screen
- Real-time process status display
- Individually programmable heated source temperatures
- Integrated pulse sequences for ternary compounds and nanolaminates
- Fast operation with simple prompts to guide the user
- Sub-cycle and global cycle entry
Options and utilities
OPTIONS
- Chuck/custom tray (square, indentations for small parts, powders)
- Custom chamber (thicker substrates)
- ATOzone - Ozone generator (necessary for certain films: Pt, Ir, SiO2, MoO2, high quality Al2O3 below 60°C, high quality HfO2)
- Optional - Safety monitor for ozone with real-time detection of ambient gaseous ozone QCM (Quartz crystal microbalance) Integration of a glove box (generally necessary to avoid exposing the substrate to humidity, sulphides, etc.)
- External control - PC/software link (allows remote programming and operation)
- Ventilated precursor cabinet
- Spare chamber
- IGPA (inert gas pressure assistance) for low vapor pressure precursors
- Higher temperatures on precursors (up to 180°C)
- Third counter-reagent
- Software control of the third counter-reagent
UTILITIES
- N2 purge gas should be >99.9995% with a shut-off valve (regulated to 10 - 30 psi, metal sealed).
- The input line is a female VCR compression fitting
- Connect nitrogen purge gas (UHP) to > 99.9995% via 1/4″ metal line to 1/4″ compression fitting on the rear.
- Connect clean dry air (90-110 psi) via 1/4″ polyethylene tubing or metal tubing to the other 1/4″ compression fitting marked CDA (Clean Dry Air).
- Min 12cfm lubricated pump (**PTFE vacuum fluid (like Fomblin) required) (610 and 810 use larger pumps typically 19.5 cfm or more)
- NW25 (KF25) connection (1″) and also exhaust line (with flow rate > 5cfm)
- Beyond one meter, use an NW40 (1.5″) exhaust pipe.
- The precursors are fixed using female VCR elbows (always use new joints). Elbow: 1/4″ joint first (with gloves)
