Processing and Annealing Furnaces

Furnaces for rapid annealing, oxidation, nitriding, sulfurization, carburization, dopant diffusion, crystallization, densification and wafer bonding processes.

• Auto loading or manual loading on request, single or from 5 or 25-wafer cassettes
• Front or top opening (safety lock to prevent opening during process)
• Radiant heating (top and bottom infrared lamps) up to 1200°C
• Temperature uniformity < 1°C
• Ultra-controlled process in perfectly repeatable conditions for an identical result for each process
• Up to 4 gas lines
• Safety enclosure around furnace for hydrogen process
• Pressure from 3.10-3 hPa to 10-6 hPa
• Temperature rise rate: 100 °C/s max.
• Temperature descent rate: 200 °C/min max.
• Ultra-compact system
• Touch screen programming
• Wafer up to 300 mm