Sputtering/Pulvérisation (PVD)

Diode or Magnetron Sputtering (RF, DC or Pulsed DC), Ion Beam Sputtering or Ion Beam Assisted Sputtering.

• Custom enclosures (sputter-up or sputter down)
• Plasma treatment, ion beam (stripping or assistance), oxidation or recrystallization possible
• Plasma treatment or pre-deposition ion pickling possible
• Simple automatic or manual loading or from cassette 5 or 25 wafers
• Spray up or down (sputter up/down)
• Cathode in planar or confocal configuration
• Reactive spraying
• Custom-made substrate holder (support by flange or electrostatic support)
• Static, dynamic, planetary, double planetary (satellite) and oscillating deposits
• Substrate RF bias before and during deposition
• Substrate temperature possible from -60° to +1000°C
• Sas possible
• Automatic pumping
• Possibility of co-spray
• Possible doping
• Multi-layer possibility with multi-cathodes
• Thickness measurement system (laser interferometer or quartz balance)
• Wafer up to 300 mm (more on request)